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AOD414 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion.
-RoHS Compliant -Halogen Free*
Features
VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 5.2mΩ (VGS = 10V) RDS(ON) < 7.0mΩ (VGS = 4.5V)
100% UIS Tested! 100% Rg Tested!
Top View D
TO-252 D-PAK Bottom View
D
GS
SG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C G
Current B,G
TC=100°C B
VGS ID
Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C
IDM IAR EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
G
Maximum 30 ±20 85 66 200 30 140 100 50 2.5 1.6
-55 to 175
S
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 14.2 40 0.56
Max 20 50 1.5
Units V V
A
A mJ W
W °C
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD414
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V VDS=30V, VGS=0V
IGSS VGS(th) ID(ON)
RDS(ON)
gFS VSD IS
Gate-Body leakage current Gate Threshold Voltage On state drain current
VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=20A
Static Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage
VGS=4.5V, ID=20A VDS=5V, ID=20A IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr
Total Gate Charge
Total Gate Charge Gate Source Charge
VGS=4.5V, VDS=15V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
Min 30 1.2 110
0.2
Typ Max Units
V
1 µA
5
100 nA
1.8 2.4
V
A
4.2 5.2 mΩ
6 7.5
5.6 7 mΩ
85 S
0.7 1
V
85 A
6060 638 355 0.45
7000
497 0.6
pF pF pF Ω
96.4 46.4 13.6 15.6 15.7 14.2 55.5 14 31 24
115 55
21 21 75 21 38 29
nC nC nC nC ns ns ns ns
ns nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any .