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AOD414 Dataheets PDF



Part Number AOD414
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AOD414 DatasheetAOD414 Datasheet (PDF)

AOD414 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. -RoHS Compliant -Halogen Free* Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 5.2mΩ (VGS = 10V) RDS(ON) < 7.0mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! Top View D TO-252 D-PAK Bottom View .

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AOD414 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. -RoHS Compliant -Halogen Free* Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 5.2mΩ (VGS = 10V) RDS(ON) < 7.0mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! Top View D TO-252 D-PAK Bottom View D GS SG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C G Current B,G TC=100°C B VGS ID Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG G Maximum 30 ±20 85 66 200 30 140 100 50 2.5 1.6 -55 to 175 S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 14.2 40 0.56 Max 20 50 1.5 Units V V A A mJ W W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD414 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=20A Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS=4.5V, ID=20A VDS=5V, ID=20A IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Total Gate Charge Gate Source Charge VGS=4.5V, VDS=15V, ID=20A Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω Turn-Off Fall Time Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs Min 30 1.2 110 0.2 Typ Max Units V 1 µA 5 100 nA 1.8 2.4 V A 4.2 5.2 mΩ 6 7.5 5.6 7 mΩ 85 S 0.7 1 V 85 A 6060 638 355 0.45 7000 497 0.6 pF pF pF Ω 96.4 46.4 13.6 15.6 15.7 14.2 55.5 14 31 24 115 55 21 21 75 21 38 29 nC nC nC nC ns ns ns ns ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any .


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