AOD413

www.DataSheet4U.com AOD413 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD413 is Pb-free (meets ROHS & Sony 259 specifications). AOD413L is a Green Product ordering option. AOD413 and AOD413L are electrically identical. TO-252 D-PAK Features VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) RDS(ON) < 69mΩ (VGS = -4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C C Maximum -40 ±20 -12 -12 -30 -12 30 50 25 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TA=25°C G TA=100°C G ID IDM IAR EAR PD PDSM TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 16.7 40 2.5 Max 25 50 3 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOD413 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbo...