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AOD412 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD412 uses advan...
www.DataSheet4U.com
AOD412 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD412 is Pb-free (meets ROHS & Sony 259 specifications). AOD412L is a Green Product ordering option. AOD412 and AOD412L are electrically identical.
TO-252 D-PAK D Top View Drain Connected to Tab G S G D S
Features
VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.0mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.5V)
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation
A C
Maximum 30 ±20 85 65 200 30 120 100 50 2.5 1.6 -55 to 175
Units V V A A mJ W W °C
TC=25°C
G
TC=100°C B
ID IDM IAR EAR PD PDSM TJ, TSTG
TC=100°C TA=25°C TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 14.2 39 0.8
Max 20 50 1.5
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AOD412
Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source ...