AOD404

www.DataSheet4U.com AOD404 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD404 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD404 is Pb-free (meets ROHS & Sony 259 specifications). AOD404L is a Green Product ordering option. AOD404 and AOD404L are electrically identical. TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7mΩ (VGS = 10V) RDS(ON) < 8mΩ (VGS = 4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A C Maximum 30 ±12 85 65 200 30 120 100 50 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TC=25°C G TC=100°C B ID IDM IAR EAR PD PDSM TJ, TSTG TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 14.2 39 0.8 Max 20 50 1.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOD404 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakd...