15GN01M

www.DataSheet4U.com Ordering number : ENN7540 15GN01M NPN Epitaxial Planar Silicon Transistor 15GN01M VHF to UHF Band High-frequency Switching, Highfrequency General-Purpose Amplifier Applications Features Package Dimensions unit : mm 2059B [15GN01M] 0.425 Small ON-resistance [Ron=2Ω (IB=3mA)]. Small output capacitance [Cob=1.1pF (VCB=10V)]. 0.15 3 2.1 1.250 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Mounted on a ceramic board(250mm2!0.8mm) Conditions Ratings 15 8 3 50 400 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Output ON resistance Symbol ICBO IEBO hFE fT Cob VCE(sat) Ron VCB=10V, IE=0 VEB=2V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=10mA VCB=10V, f=1MHz IC=20mA, IB=2mA IB=3mA, f=10kHz 200 1.0 1.5 1.1 0.06 2.0 1.5 0.12 Conditions Ratings min typ max 0.5 0.5 400 GHz pF V Ω Unit µA µA Marking : ZA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-sup...