MCH5819

www.DataSheet4U.com Ordering number : ENN7454 MCH5819 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5819 DC / DC Converter Applications Features Package Dimensions Composite type with a N-Channel Sillicon MOSFET unit : mm (MCH3408) and a Schottky Barrier Diode (SBS006M) 2195 contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 4V drive. [SBD] Short reverse recovery time. Low forward voltage. 0.25 2.1 1.6 0.25 [MCH5819] 0.3 0.15 4 5 0.65 2.0 (Bottom view) 0.07 3 2 1 5 4 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5 0.85 1 2 3 (Top view) Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 0.5 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit 30 ±20 1.4 5.6 0.8 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : QV Any and all SANYO products described or contained herein do not have specifications that can handle applications that require ext...