PC133/PC100 Unbuffered DIMM
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M366S1654CTS
M366S1654CTS SDRAM DIMM
PC133/PC100 Unbuffered DIMM
16Mx64 SDRAM DIMM based on 16Mx1...
Description
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M366S1654CTS
M366S1654CTS SDRAM DIMM
PC133/PC100 Unbuffered DIMM
16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung M366S1654CTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S1654CTS consists of four CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M366S1654CTS is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FEATURE
Performance range Part No. M366S1654CTS-L7C/C7C M366S1654CTS-L7A/C7A M366S1654CTS-L1H/C1H M366S1654CTS-L1L/C1L Max Freq. (Speed) 133MHz (7.5ns@CL=2) 133MHz (7.5ns@CL=3) 100MHz (6.0ns@CL=2) 100MHz (6.0ns@CL=3)
Burst mode operation Auto & self refresh capability (8192 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequentia...
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