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APT50GP60B2DF2

Advanced Power Technology
Part Number APT50GP60B2DF2
Manufacturer Advanced Power Technology
Description POWER MOS 7 IGBT
Published Dec 19, 2006
Detailed Description com TYPICAL PERFORMANCE CURVES APT50GP60B2DF2 APT50GP60B2DF2 600V POWER MOS 7 IGBT ® T-MaxTM The ...
Datasheet PDF File APT50GP60B2DF2 PDF File

APT50GP60B2DF2
APT50GP60B2DF2

Overview
com TYPICAL PERFORMANCE CURVES APT50GP60B2DF2 APT50GP60B2DF2 600V POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
G • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 200 kHz operation @ 400V, 28A • 100 kHz operation @ 400V, 44A • SSOA rated C E C G E MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Conti...


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