POWER MOS 7 IGBT
www.DataSheet4U.com
TYPICAL PERFORMANCE CURVES
APT50GP60B2DF2
APT50GP60B2DF2
600V
POWER MOS 7 IGBT
®
T-MaxTM
The ...
Description
www.DataSheet4U.com
TYPICAL PERFORMANCE CURVES
APT50GP60B2DF2
APT50GP60B2DF2
600V
POWER MOS 7 IGBT
®
T-MaxTM
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
G
Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff
200 kHz operation @ 400V, 28A 100 kHz operation @ 400V, 44A SSOA rated
C
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current
7
All Ratings: TC = 25°C unless otherwise specified.
APT50GP60B2DF2 UNIT
600 ±20 ±30
@ TC = 25°C Volts
100 72 190 190A@600V 625 -55 to 150 300
Watts °C Amps
Continuous Collector Current @ TC = 110°C Pulsed Collector Current
1
@ TC = 150°C
Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 750
2
6 2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15...
Similar Datasheet