BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER
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1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER
FEATURES
• WIDE BANDWIDTH: 1200 MHz at 3 dB Poin...
Description
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1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER
FEATURES
WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P HIGH POWER GAIN: 22 dB TYP AT f = 500 MHz HIGH ISOLATION SINGLE POWER SUPPLY: VCC = 5 V INPUT/OUTPUT MATCHED TO 50 Ω AVAILABLE IN TAPE AND REEL (UPC1676G)
Gain, GS (dB)
20 GP 30
UPC1676B UPC1676G UPC1676P
UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE
VCC = 5.5 V 5.0 V 4.5 V 10
VCC = 5.5 V 10 NF 5.0 V 4.5 V 5
0 60 100 200 500 1000
0 2000
DESCRIPTION
The UPC1676 is a silicon monolithic integrated circuit designed for wide-band amplifiers covering the VHF to UHF bands. The series is available in two package styles: a surface mount package (UPC1676G), and an 8 lead ceramic flat package (UPC1676B). Also available in chip form (UPC1676P). NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
Frequency, f (MHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 5 V, f = 500 MHz)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GS PSAT BW NF RLIN RLOUT ISOL RTH(J-C) PARAMETERS AND CONDITIONS Supply Current Small Signal Gain Saturated Output Power Bandwidth 3 dB down from gain at 100 MHz Noise Figure Input Return Loss Output Return Loss Isolation Thermal Resistance (Junction to Case) UNITS mA dB dBm MHz dB dB dB dB °C/W 18 10 24 UPC1676B1 B08 MIN 14 18 3.5 TYP MAX 19 20 5.5 4.5 21 13 28 50 6 9 6 24 24 22 UPC1676G 39 MIN 14 19 3 TYP MAX 19 22 5 4....
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