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STP11NM60N Dataheets PDF



Part Number STP11NM60N
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL Power MOSFET
Datasheet STP11NM60N DatasheetSTP11NM60N Datasheet (PDF)

www.DataSheet4U.com STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET General features Type STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω ID 3 3 2 1 2 1 10A 10A 10A (1) 10A TO-220 IPAK 3 1. Limited only by maximum temperature allowed ■ ■ ■ 1 3 100% avalanche tested Low input capacitance and gate charge Low gate input.

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www.DataSheet4U.com STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET General features Type STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω ID 3 3 2 1 2 1 10A 10A 10A (1) 10A TO-220 IPAK 3 1. Limited only by maximum temperature allowed ■ ■ ■ 1 3 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel DPAK 1 2 TO-220FP Description This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Applications ■ Switching application Order codes Part number STD11NM60N-1 STD11NM60N STP11NM60N STF11NM60N Marking D11NM60N D11NM60N P11NM60N F11NM60N Package IPAK DPAK TO-220 TO-220FP Packaging Tube Tape & reel Tube Tube November 2006 Rev 2 1/17 www.st.com 17 Contents STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter TO-220/ DPAK/IPAK VDS VGS ID ID IDM (2) PTOT Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor dv/dt (3) VISO Tj Tstg Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Operating junction temperature Storage temperature -10 6.3 40 100 0.8 15 2500 -55 to 150 600 ± 25 10(1) 6.3 (1) 40(1) 25 0.2 Unit TO-220FP V V A A A W W/°C V/ns V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤10A, di/dt ≤400A/µs, VDD =80% V(BR)DSS Table 2. Thermal data TO-220 DPAK/IPAK TO-220FP 1.25 62.5 100 300 5 62.5 Unit °C/W °C/W °C Rthj-case Rthj-amb Tl Thermal resistance junction-case Max Thermal resistance junction-amb Max Maximum lead temperature for soldering purpose Table 3. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj=25°C, ID=IAS, VDD= 50V) Max value 3.5 200 Unit A mJ 3/17 Electrical characteristics STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS dv/dt(1) IDSS IGSS VGS(th) RDS(on) 1. On/off states Parameter Drain-source breakdown voltage Drain-source voltage slope Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 Vdd=400V,Id=5A, Vgs=10V VDS=Max rating, VDS=Max rating,Tc=125°C VGS = ±20V VDS= VGS, ID = 250µA VGS= 10V, ID= 5A 2 3 0.37 Min. 600 45 1 10 ±100 Typ. Max. Unit V V/ns µA µA nA V Ω 4 0.45 Characteristics value at turn off on inductive load Table 5. Symbol gfs(1) Ciss Coss Crss Coss eq.(2) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent ouput capacitance Gate input resistance Test conditions VDS =15V, ID= 5A ID = 10A Min. Typ. 7.5 850 44 5 130 Max. Unit S pF pF pF pF VDS =50V, f=1MHz, VGS=0 VGS=0, VDS =0V to 480V f=1MHz Gate DC Bias=0 Test signal level=20mV open drain VDD=480V, ID = 5A VGS =10V (see Figure 18) Rg 3.7 Ω nC nC nC Qg Qgs Qgd 1. Total gate charge Gate-source charge Gate-drain charge 31 4.2 15.9 Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/17 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=300V, ID=5A, RG=4.7Ω, VGS=10V (see Figure 17) Min Typ 22 18.5 50 12 Max.


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