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NCV1413B Dataheets PDF



Part Number NCV1413B
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High Current Darlington Transistor Arrays
Datasheet NCV1413B DatasheetNCV1413B Datasheet (PDF)

MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit them to drive incandescent lamps. The MC1413, B with a 2.7 kW series input r.

  NCV1413B   NCV1413B



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MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit them to drive incandescent lamps. The MC1413, B with a 2.7 kW series input resistor is well suited for systems utilizing a 5.0 V TTL or CMOS Logic. Features • Pb−Free Packages are Available* • NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes http://onsemi.com 16 1 16 1 PDIP−16 P SUFFIX CASE 648 SOIC−16 D SUFFIX CASE 751B 2.7 k 5.0 k 1/7 MC1413, B 3.0 k Pin 9 Figure 1. Representative Schematic Diagram 1 16 2 15 3 14 4 13 5 12 6 11 7 10 89 (Top View) Figure 2. PIN CONNECTIONS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION Device MC1413D MC1413DG MC1413DR2 MC1413DR2G MC1413P MC1413PG MC1413BD MC1413BDG MC1413BDR2 MC1413BDR2G MC1413BP MC1413BPG Package Shipping† SOIC−16 48 Units/Rail SOIC−16 (Pb−Free) 48 Units/Tube SOIC−16 SOIC−16 (Pb−Free) PDIP−16 PDIP−16 (Pb−Free) 2500 Tape & Reel 2500 Tape & Reel 25 Units/Rail 25 Units/Rail SOIC−16 SOIC−16 (Pb−Free) SOIC−16 48 Units/Rail 48 Units/Rail 2500 Tape & Reel SOIC−16 2500 Tape & Reel (Pb−Free) PDIP−16 25 Units/Rail PDIP−16 (Pb−Free) 25 Units/Rail NCV1413BDR2 SOIC−16 2500 Tape & Reel NCV1413BDR2G SOIC−16 2500 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See general marking information in the device marking section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 8 1 Publication Order Number: MC1413/D MC1413, MC1413B, NCV1413B MAXIMUM RATINGS (TA = 25°C, and rating apply to any one device in the package, unless otherwise noted.) Rating Symbol Value Unit Output Voltage Input Voltage Collector Current − Continuous Base Current − Continuous Operating Ambient Temperature Range MC1413 MC1413B NCV1413B VO 50 V VI 30 V IC 500 mA IB 25 mA TA °C −20 to +85 −40 to +85 −40 to +125 Storage Temperature Range Junction Temperature Thermal Resistance, Junction−to−Ambient Case 648, P Suffix Case 751B, D Suffix Tstg TJ RqJA −55 to +150 150 67 100 °C °C °C/W Thermal Resistance, Junction−to−Case Case 648, P Suffix Case 751B, D Suffix RqJC °C/W 22 20 Electrostatic Discharge Sensitivity (ESD) Human Body Model (HBM) Machine Model (MM) Charged Device Model (CDM) ESD 2000 400 1500 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress.


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