Trench Power MOSFET
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Advanced Technical Information
Trench Power MOSFET
-Phaseleg Topologyin ISOPLUS i4-PACTM
FMM 65-0...
Description
www.DataSheet4U.com
Advanced Technical Information
Trench Power MOSFET
-Phaseleg Topologyin ISOPLUS i4-PACTM
FMM 65-015P ID25
VDSS RDSon
T1
= 65 A = 150 V = 12.5 mΩ
T2
1 5
MOSFET T1/T2 Symbol VDSS VGS ID25 ID90 IF25 IF90 TC = 25°C TC = 90°C (diode) TC = 25°C (diode) TC = 90°C Conditions TVJ = 25°C to TVJmax Maximum Ratings 150 ±20 65 50 65 50 V V A A A A
Features trench MOSFET - very low on state resistance RDSon - fast switching - fast body diode ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline Applications automotive and industrial vehicles - AC drives - choppers - replacing series resistors for DC drives, heating etc. - DC-DC converters - electronic switches -replacing relays and fuses power supplies - DC-DC converters - solar inverters battery supplied systems - choppers or inverters for drives - battery chargers
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 12.5 2 0.1 22 m Ω 4 V
RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF t rr RthJC RthJH
VGS = 10 V; ID = ID90 VDS = 20 V; ID = 1 mA; VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 120 V; ID = 75 A
10 µA mA 200 nA
230 45 90 35 80 230 100 0.9 130 1.2 1.3
nC nC nC ns ns ns ns V ns 0.6 K/W K/W
VGS= 10 V; VDS = ...
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