EC3A01B

www.DataSheet4U.com Ordering number : ENN6612B EC3A01B N-Channel Silicon Junction FET EC3A01B Features Electret Condenser Microphone Applications Ultrasmall (1006 size), thin (0.5mm) leadless package. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDO VGS(off) IDSS yfs Ciss Crss Conditions IG=--100µA VDS=5V, ID=1µA VDS=5V, VGS=0 VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz Ratings min --20 -0.2 140 0.5 1.2 3.5 0.65 --0.6 --1.2 350 typ max Unit V V µA mS pF pF *The EC3A01B is classified by IDSS as follows.(unit : µA) Rank IDSS V4A 140 to 240 V5A 210 to 350 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasona...