RN2411

www.DataSheet4U.com RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2410,RN2411 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1410, RN1411 Unit: mm Equivalent Circuit Maximum Ratings (Ta = 25°C) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −5 −100 200 150 −55~150 Unit V V V mA mW °C °C JEDEC TO-236MOD EIAJ SC-59 TOSHIBA 2-3F1A Weight: 0.012g Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Translation frequency Collector output capacitance Input resistor RN2410 RN2411 Symbol ICBO IEBO hFE VCE (sat) fT Cob R1 Test Circuit ― ― ― ― ― ― ― Test Condition VCB = −50V, IE = 0 VEB = −5V, IC = 0 VCE = −5V, IC = −1mA IC = −5mA, IB = −0.25mA VCE = −10V, IC = −5mA VCB = −10V, IE = 0, f = 1MHz ― Min ― ― 120 ― ― ― 3.29 7 Typ. ― ― ― −0.1 200 3 4.7 10 Max −100 −100 400 −0.3 ― 6 6.11 13 Unit nA nA ― V MHz pF kΩ 1 2001-06-07 RN2410,RN2411 2 2001-06-07 RN2410,RN2411 3 2001-06-07 RN2410,RN2411 Type Name Marking RN2410 RN2411 4 2001-06-07 RN2410,RN2411 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHI...