com
June/2004
MITSUBISHI SEMICONDUCTOR
MGF4953A/MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
DESCRIPTION
The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
Low noise figure @ f=12GHz MGF4953A : NFmin. = 0. 40dB (Typ. ) MGF4954A : NFmin. = 0. 60dB (Typ. ) High associated gain @ f=12GHz Gs = 13. 5dB (Typ. )
Fig. 1
APPLICATION
C to K band low noise amplifiers
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
QUALITY GRADE
GG
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