(MCR22-6 / -8) SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
MCR22-6, MCR22-8
Preferred Device
Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed a...
Description
MCR22-6, MCR22-8
Preferred Device
Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low−power switching applications.
Features
150 A for 2 ms Safe Area High dv/dt Very Low Forward “On” Voltage at High Current Low−Cost TO−226 (TO−92) Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off−State Voltage (Note 1)
(RGK = IK, TJ = *40 to +110°C, Sine Wave,
50 to 60 Hz, RGK = 1kW)
MCR22−6
MCR22−8
VDRM, VRRM
400 600
On−State Current RMS (180° Conduction Angles, TC = 80°C)
IT(RMS)
1.5
Peak Non−repetitive Surge Current, @TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms)
ITSM I2t
15 0.9
Forward Peak Gate Power (Pulse Width ≤ 1.0 msec, TA = 25°C)
PGM
0.5
Forward Average Gate Power (t = 8.3 msec, TA = 25°C)
PG(AV)
0.1
Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TA = 25°C)
IFGM
0.2
Reverse Peak Gate Voltage (Pulse Width ≤ 1.0 ms, TA = 25°C)
VRGM
5.0
Operating Junction Temperature Range @ Rated VRRM and VDRM
TJ −40 to +110
Storage Temperature Range THERMAL CHARACTERISTICS
Tstg −40 to +150
Unit V
A A A2s W W A V °C °C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Lead Solder Temperature (Lead Length q 1/16″ from case, 10 S Max)
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