Document
HAT2172H
Silicon N Channel Power MOS FET Power Switching
Features
• High speed switching • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS(on) = 5.8 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5
1 234
5 D
4 G
SSS 123
REJ03G0132-0500 Rev.5.00
Sep 20, 2005
1, 2, 3 Source
4
Gate
5
Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
VDSS VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C
Tch
Tstg
Ratings 40 ±20 30 120 30 20 32 20 6.25 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
°C/W °C °C
Rev.5.00 Sep 20, 2005 page 1 of 7
HAT2172H
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 40
Gate to source breakdown voltage V(BR)GSS ±20
Gate to source leak current
IGSS
—
Zero gate voltage drain current
IDSS
—
Gate to source cutoff voltage
VGS(off)
1.5
Static drain to source on state resistance
RDS(on)
—
RDS(on)
—
Forward transfer admittance
|yfs|
27
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage
VDF
—
Body–drain diode reverse recovery
trr
—
time
Notes: 4. Pulse test
Typ — — — — — 5.8 6.6 45 2420 480 150 0.5 32 9 4.0 12 20 38 4.5 0.84 32
Max — — ±10 1 3.0 7.5 9.2 — — — — — — — — — — — — 1.10 —
Unit V V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns
(Ta = 25°C)
Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 40 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 7 V Note4 ID = 15 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz
VDD = 10 V, VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 15 A, VDD ≅ 10 V, RL = 0.67 Ω, Rg = 4.7 Ω
IF = 30 A, VGS = 0 Note4 IF = 30 A, VGS = 0 diF/ dt = 100 A/ µs
Rev.5.00 Sep 20, 2005 page 2 of 7
Channel Dissipation Pch (W)
HAT2172H
Main Characteristics
Power vs. Temperature Derating 40
30
20
10
Drain Current ID (A)
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50 10 V
40
4.4 V
30
20
Pulse Test 4.0 V
3.8 V
3.6 V
3.4 V 10
VGS = 3.0 V
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
200 Pulse Test
150
ID = 20 A 100
10 A 50
5A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS(on) (mV)
Rev.5.00 Sep 20, 2005 page 3 of 7
Drain to Sourc.