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HAT2172H Dataheets PDF



Part Number HAT2172H
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N-Channel MOSFET
Datasheet HAT2172H DatasheetHAT2172H Datasheet (PDF)

HAT2172H Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 5.8 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0132-0500 Rev.5.00 Sep 20, 2005 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current B.

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HAT2172H Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 5.8 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0132-0500 Rev.5.00 Sep 20, 2005 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Ratings 40 ±20 30 120 30 20 32 20 6.25 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C Rev.5.00 Sep 20, 2005 page 1 of 7 HAT2172H Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 40 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Gate to source cutoff voltage VGS(off) 1.5 Static drain to source on state resistance RDS(on) — RDS(on) — Forward transfer admittance |yfs| 27 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Gate Resistance Rg — Total gate charge Qg — Gate to source charge Qgs — Gate to drain charge Qgd — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fall time tf — Body–drain diode forward voltage VDF — Body–drain diode reverse recovery trr — time Notes: 4. Pulse test Typ — — — — — 5.8 6.6 45 2420 480 150 0.5 32 9 4.0 12 20 38 4.5 0.84 32 Max — — ±10 1 3.0 7.5 9.2 — — — — — — — — — — — — 1.10 — Unit V V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 40 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 7 V Note4 ID = 15 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, VGS = 10 V, ID = 30 A VGS = 10 V, ID = 15 A, VDD ≅ 10 V, RL = 0.67 Ω, Rg = 4.7 Ω IF = 30 A, VGS = 0 Note4 IF = 30 A, VGS = 0 diF/ dt = 100 A/ µs Rev.5.00 Sep 20, 2005 page 2 of 7 Channel Dissipation Pch (W) HAT2172H Main Characteristics Power vs. Temperature Derating 40 30 20 10 Drain Current ID (A) 0 50 100 150 200 Case Temperature Tc (°C) Typical Output Characteristics 50 10 V 40 4.4 V 30 20 Pulse Test 4.0 V 3.8 V 3.6 V 3.4 V 10 VGS = 3.0 V 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 200 Pulse Test 150 ID = 20 A 100 10 A 50 5A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS(on) (mV) Rev.5.00 Sep 20, 2005 page 3 of 7 Drain to Sourc.


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