FDMS3572

www.DataSheet4U.com FDMS3572 N-Channel UltraFET Trench® MOSFET November 2006 FDMS3572 N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ Features General Description „ Max rDS(on) = 16.5mΩ at VGS = 10V, ID = 8.8A „ Max rDS(on) = 24mΩ at VGS = 6V, ID = 8.4A „ Typ Qg = 28nC at VGS = 10V „ Low Miller Charge „ Optimized efficiency at high frequencies „ RoHS Compliant tm UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Application „ DC - DC Conversion Pin 1 S S S G D D D D D D D 5 6 7 8 4 G 3 S 2 S 1 S D Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 80 ±20 22 48 8.8 50 78 2.5 -55 to +150 W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.6 50 °C/W Package Marking and Ordering Information Device Marking FDMS3572 Device FDMS3572 Package Power 56 Reel Size 7’’ Tape Width 12mm Quantity 3000 units ©2006 Fairchild Semicondu...