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ECG002
Product Features
• • • • • • DC – 6 GHz +15.5 dBm P1dB at 1 GHz +29 dBm OIP3 at 1 GHz 20 dB Gain at 1 GHz 3.8 dB Noise Figure Available in lead-free/green SOT-86, SOT-363, & SOT-89 package styles • Internally matched to 50 Ω
The Communications Edge TM Product Information
InGaP HBT Gain Block
Product Description
The ECG002 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1000 MHz, the ECG002 typically provides 20 dB of gain, +29 dBm Output IP3, and +15.5 dBm P1dB.
Functional Diagram
GND 4
1
2 GND
3 RF OUT
Applications
• • • • • Mobile Infrastructure CATV / FTTX W-LAN / ISM RFID WiMAX / WiBro
The ECG002 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The device is ideal for wireless applications and is available in low-cost, surface-mountable plastic lead-free/green/RoHS-compliant SOT-363, SOT-86 and SOT-89 packages. All devices are 100% RF and DC tested. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the ECG002 will work for other various applications within the DC to 6 GHz frequency range such as CATV and mobile wireless.
RF IN
ECG002B-G
GND
4
RF In
1
RF Out
3
2
GND
ECG002C-G
GND 1 6 RF OUT
GND
2
5
GND
RF IN
3
4
GND
ECG002F-G
Specifications (1)
Parameter
Operational Bandwidth Test Frequency Gain Output P1dB Output IP3 (2) Test Frequency Gain Large-signal Gain (3) Output P1dB Output IP3 (2) Noise Figure Device Voltage Device Current
Typical Performance (1)
Units
MHz MHz dB dBm dBm MHz dB dB dBm dBm dB V mA
Min
DC
Typ
1000 20 +15.5 +29 2000 19 18 +15 +29 3.8 3.9 45
Max
6000
Parameter
Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure
Units
MHz dB dB dB dBm dBm dB 500 20.6 -17 -18 +15.8 +28 3.8
Typical
900 20 -17 -18 +15.5 +29 3.7 1900 19.5 -15 -21 +15 +29 3.8 2140 18.7 -15 -21 +14.9 +29 3.8
17 16 +13
3.5
4.3
1. Test conditions unless otherwise noted: 25 ºC, Supply Voltage = +5 V, Rbias = 24 Ω, 50 Ω System. 2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Large-signal gain is tested with an input power level of -3 dBm.
Ordering Information Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature Device Current RF Input Power (continuous) Junction Temperature -40 to +85 °C -55 to +150 °C 150 mA +12 dBm +250 °C
Part No.
ECG002B-G ECG002C-G ECG002F-G ECG002B-PCB ECG002C-PCB ECG002F-PCB
Description
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 package)
Rating
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-86 package)
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-363 package)
700 – 2400 MHz Fully Assembled Eval. Board 700 – 2400 MHz Fully Assembled Eval. Board 700 – 2400 MHz Fully Assembled Eval. Board
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail:
[email protected] • Web site: www.wj.com
Page 1 of 7 April 2006
ECG002
Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure
The Communications Edge TM Product Information
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +5 V, Rbias = 24 Ω, Icc = 45 mA
MHz dB dB dB dBm dBm dB 100 21 -18 -17 +15.4 +28 3.9 500 20.6 -17 -17 +15.6 +28 3.8 900 20 -17 -18 +15.5 +29 3.8 1900 19.5 -15 -20 +15 +29 3.8 2140 18.7 -15 -21 +15 +29 3.8 2400 18.2 -15 -22 +15 +29 3.9 3500 16.4 -16 -35 +14.5 5800 13.3 -19 -16 +11
1. Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = +3.9 V, Rbias = 24 Ω, Icc = 45 mA typical, 50 Ω System. 2. 3OIP measured with two tones at an output power of -1 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency 22 20
S11, S22 (dB)
S11, S22 vs. Frequency 0 -5 -10 -15 Icc (mA) -20 -25 -30 -35 -40 3000 0 1 2 3 4 Frequency (GHz) 5 6 S22
60 40 20 0 3.00 120 100
Vde vs. Icc
Gain (dB)
S11
80 +25C
18 16 14 +25C 12 500 1000 -40C +85C 2500
1500 2000 Frequency (MHz)
3.20
3.40
3.60
3.80
4.00
4.20
4.40
Vde (V)
OIP3 vs. Frequency
32
Noise Figure vs. Frequency 4.5 4 3.5 3 2.5 P1dB (dBm) NF (dB) 20 18 16 14 12
P1dB vs. Frequency
30
OIP3 (dBm)
28
26 +25C 24 500 1000 1500 -40C 2000 +85C 2500 3000
+25C 2 500 1000 1500 Frequency (MHz) 2000 10 500 1000
-40C
+85C 2500 3000
Frequency (MHz)
1500 2000 Frequenc.