ZXMP2120G4

www.DataSheet4U.com ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. A SOT23-5 version is also available (ZXMP2120E5). SOT223 FEATURES High voltage Low on-resistance Fast switching speed Low gate drive Low threshold SOT223 package variant engineered to increase spacing between high voltage pins. APPLICATIONS Active clamping of primary side MOSFETs in 48 volt DC-DC converters ORDERING INFORMATION DEVICE ZXMP2120G4TA ZXMP2120G4TC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 12mm embossed 12mm embossed QUANTITY PER REEL 1,000 units 4,000 units N/C PINOUT - TOP VIEW DEVICE MARKING ZXMP 2120 ISSUE 1 - DECEMBER 2005 1 ZXMP2120G4 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (VGS =10V; Tamb =25°C) Pulsed Drain Current (c) (c) (a) SYMBOL V DS V GS ID I DM I SM P tot VALUE -200 Ϯ20 -200 UNIT V V mA A A W mW/°C °C -1.2 -1.2 2.0 1.6 Pulsed Source Current (Body Diode) Power Dissipation at T amb =25°C Linear derating factor (a) Operating and Storage Temperature Range T j :T stg -55 to +150 THERMAL RESISTANCE PARAMET...