200V P-CHANNEL ENHANCEMENT MODE MOSFET
V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA
This 200V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
A 4 pin SOT223 version is also available (ZXMP2120G4).
• High voltage
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• SOT23-5 package variant engineered to increase spacing between
high voltage pins.
• Active clamping of primary side MOSFETs in 48 volt DC-DC converters
TAPE WIDTH (mm)
PINOUT - TOP VIEW
ISSUE 2 - SEPTEMBER 2006