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UFB60FA20 Dataheets PDF



Part Number UFB60FA20
Manufacturers International Rectifier
Logo International Rectifier
Description Insulated Ultrafast Rectifier Module
Datasheet UFB60FA20 DatasheetUFB60FA20 Datasheet (PDF)

www.DataSheet4U.com Bulletin PD-20778 03/02 UFB60FA20 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • Two Fully Independent Diodes Ceramic Fully Insulated Package (VISOL = 2500V AC) Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward Voltage Optimized for Power Conversion: Welding and Industrial SMPS Applications Industry Standard Outline Plug-in Compatible with other SOT-227 Packages Easy to Assemble Direct Mounting to Heatsink trr = 27ns IF(AV) .

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www.DataSheet4U.com Bulletin PD-20778 03/02 UFB60FA20 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • Two Fully Independent Diodes Ceramic Fully Insulated Package (VISOL = 2500V AC) Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward Voltage Optimized for Power Conversion: Welding and Industrial SMPS Applications Industry Standard Outline Plug-in Compatible with other SOT-227 Packages Easy to Assemble Direct Mounting to Heatsink trr = 27ns IF(AV) = 60A @ TC = 100°C VR = 200V Description The UFB60FA20 insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping lifetime control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DCDC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/ RFI. Absolute Maximum Ratings Parameters VR IF IFSM PD V ISOL TJ, TSTG Cathode-to-Anode Voltage Continuous Forward Current, TC = 100°C Single Pulse Forward Current, TC = 25°C Max. Power Dissipation, TC = 100°C Operating Junction and Storage Temperatures Per Diode Per Diode Per Module Max 200 30 250 53 2500 - 55 to 150 Units V A W V °C RMS Isolation Voltage, Any Terminal to Case, t = 1 min Case Styles UFB60FA20 1 4 SOT-227 www.irf.com 2 3 1 UFB60FA20 Bulletin PD-20778 03/02 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) per diode Parameters VBR VFM Cathode Anode Breakdown Voltage Forward Voltage Min Typ Max Units Test Conditions 200 V V V µA mA pF IR = 100µA IF = 30A IF = 30A, TJ = 150°C VR = VR Rated TJ = 150°C, VR = VR Rated VR = 200V 0.96 1.08 0.78 0.86 119 100 1.0 - IRM Reverse Leakage Current - CT Junction Capacitance - Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) per diode Parameters trr Reverse Recovery Time Min Typ Max Units Test Conditions 31 51 2.7 6.8 41 174 27 nC A ns IF = 1.0A, diF/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C IF = 30A VR = 100V diF /dt = 200A/µs IRRM Peak Recovery Current - Qrr Reverse Recovery Charge - Thermal - Mechanical Characteristics Parameters RthJC RthCS Wt T Junction to Case, Single Leg Conducting Both Leg Conducting Case to Heat Sink, Flat, Greased Surface Weight Mounting Torque Min - Typ 0.05 30 1.3 Max 1.9 0.95 - Units °C/W K/W g (N*m) 2 www.irf.com UFB60FA20 Bulletin PD-20778 03/02 1000 100 Tj = 150˚C Reverse Current - I R (µA) 10 125˚C 1 0.1 0.01 0.001 0 50 100 150 200 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage Instantaneous Forward Current - I F (A) 100 25˚C 1000 10 Junction Capacitance - C T (pF) Tj = 25˚C Tj = 150˚C Tj = 125˚C Tj = 25˚C 100 1 0 0.5 1 1.5 2 2.5 Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (per diode) 10 Thermal Impedance Z thJC (°C/W) 10 1 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 1 Single Pulse (Thermal Resistance) 0.1 0.01 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (per diode) 1 www.irf.com 3 UFB60FA20 Bulletin PD-20778 03/02 150 Allowable Case Temperature (°C) Average Power Loss ( W ) 30 RMS Limit 140 130 120 110 100 Square wave (D = 0.50) Rated Vr applied 25 20 15 10 5 0 D = 0.01 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC DC 90 see note (3) 80 0 5 10 15 20 25 30 35 Average Forward Current - I F(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current (per leg) 0 5 10 15 20 25 30 35 Average Forward Current - I F(AV) (A) Fig. 6 - Forward Power Loss Characteristics (per leg) 70 If = 30A Vrr = 100V 550 500 450 400 Tj = 125˚C If = 30A Vrr = 100V 60 50 trr ( ns ) 350 Qrr ( nC ) Tj = 125˚C 40 Tj = 25˚C 300 250 200 150 30 20 100 50 Tj = 25˚C 10 100 di F /dt (A/µs ) 1000 0 100 di F /dt (A/µs ) 1000 Fig. 7 - Typical Reverse Recovery time vs. di F /dt Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR 4 www.irf.com UFB60FA20 Bulletin PD-20778 03/02 3 IF t rr ta tb 4 VR = 200V 0 2 Q rr I RRM 0.01 Ω L = 70µH D.U.T. dif/dt ADJUST D G IRFP250 S 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measure.


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