SI6434DQ

www.DataSheet4U.com Si6434DQ Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 0.042 @ VGS = 4.5 V rDS(on) (W) 0.028 @ VGS = 10 V ID (A) "5.6 "4.5 D TSSOP-8 D S S G 1 2 3 4 Top View S* N-Channel MOSFET D Si6434DQ 8 7 6 5 D S S D G * Source Pins 2, 3, 6 and 7 must be tied common. ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg Symbol VDS VGS Limit 30 "20 "5.6 "4.4 "30 1.25 1.5 Unit V A W 1.0 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70178 S-49534—Rev. D, 06-Oct-97 www.Vishay Siliconix.com S FaxBack 408-970-5600 Symbol RthJA Limit 83 Unit _C/W 1 Si6434DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State On State Resistancea Drain-Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 5.6 A VGS ...