OM60N06ST

www.DataSheet4U.com OM60N06SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDS(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES Isolated Hermetic Metal Packages Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TXV And S Levels Ceramic Feedthroughs Available DESCRIPTION This series of hermetic packaged MOSFETs are ideally suited for low voltage applications; battery powered voltage power supplies, motor controls, dc to dc converters and synchronous rectification. The low conduction loss allows smaller heat sinking and the low gate charge simpler drive circuitry. MAXIMUM RATINGS (Per Device) PART NO. OM60N06SA OM50N06SA OM50N06ST OM60N05SA OM50N05SA OM50N05ST VDS (V) 60 60 60 50 50 50 RDS(on) ( ) .025 .030 .035 .025 .030 .035 ID (A) 60 50 50 60 50 50 Package TO-254AA TO-254AA TO-257AA TO-254AA TO-254AA TO-257AA 3.1 SCHEMATIC Drain T-3 PIN CONNECTION M-PAK PIN CONNECTION 1 2 3 Gate 1 2 3 Source Pin 1: Drain Pin 2: Source Pin 3: Gate Pin 1: Drain Pin 2: Source Pin 3: Gate 4 11 R1 Supersedes 3 02 R0 3.1 - 65 OM60N06SA - OM50N05ST ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter VDS VDGR VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @ TC = 25°C PD @ TC = 100°C Junction-To-Case TJ Tstg Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M ) Gate-Source Voltage, Continuous Continuous Drain C...