High Linearity InGaP HBT Amplifier
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AH312 / ECP200G
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
Product Features
• ...
Description
www.DataSheet4U.com
AH312 / ECP200G
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
Product Features
400 – 2300 MHz +33 dBm P1dB +51 dBm Output IP3 18 dB Gain @ 900 MHz 11 dB Gain @ 1960 MHz Single Positive Supply (+5V)
Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg.
Product Description
The AH312 / ECP200 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in a lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The AH312 / ECP200 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the AH312 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations.
Functional Diagram
1 8 7 6 5
2 3
4
Applications
Final stage amplifiers for Repeaters Mobile Infrastructure Defense / Homeland Security
Function Vref Input Output Vbias GND N/C or GND
Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5
Specifications (1)
Parameter
Operational Bandwidth Test Frequency Gain Input R.L. Output R.L. Output P1dB Output IP3 (2) IS-95A Channel Power
@ -45 dBc ACPR, ...
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