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AH312 Dataheets PDF



Part Number AH312
Manufacturers WJ Communication
Logo WJ Communication
Description High Linearity InGaP HBT Amplifier
Datasheet AH312 DatasheetAH312 Datasheet (PDF)

www.DataSheet4U.com AH312 Product Features • 400 – 2300 MHz • +33 dBm P1dB • +51 dBm Output IP3 • 18 dB Gain @ 900 MHz • +5V Single Positive Supply • MTTF > 100 Years The Communications Edge TM Product Information 2 Watt, High Linearity InGaP HBT Amplifier Product Description The AH312 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowbandtuned application circuits with up to +49 dBm OIP3 and.

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www.DataSheet4U.com AH312 Product Features • 400 – 2300 MHz • +33 dBm P1dB • +51 dBm Output IP3 • 18 dB Gain @ 900 MHz • +5V Single Positive Supply • MTTF > 100 Years The Communications Edge TM Product Information 2 Watt, High Linearity InGaP HBT Amplifier Product Description The AH312 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowbandtuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in a leadfree/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. Functional Diagram 1 8 2 7 3 6 4 5 The AH312 is targeted for use as a driver amplifier in • Lead-free/green/RoHS-compliant wireless infrastructure where high linearity and medium power is required. An internal active bias allows the SOIC-8 SMT Pkg. AH312 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination Applications makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base • Final stage amplifiers for Repeaters stations. Function Vref Input Output Vbias GND N/C or GND Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5 • Mobile Infrastructure Specifications (1) Parameter Operational Bandwidth Test Frequency Gain Input R.L. Output R.L. Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR, 1960 MHz Typical Performance (4) Units Min MHz MHz dB dB dB dBm dBm dBm dBm dB mA V 700 400 9 2140 10 20 6.8 +33.2 +48 +27.5 +25.3 7.7 800 +5 900 Typ Max 2300 Parameter Frequency S21 – Gain S11 – Input R.L. S22 – Output R.L. Output P1dB Output IP3 IS-95A Channel Power @ -45 dBc ACPR Units MHz dB dB dB dBm dBm dBm dBm dB 8.0 900 18 -18 -11 +33 +49 +27 Typical 1960 11 -19 -6.8 +33.4 +51 +27.5 +25.3 7.3 7.7 +5 V @ 800 mA 2140 10 -20 -6.8 +33.2 +48 +32 +47 wCDMA Channel Power @ -45 dBc ACLR wCDMA Channel Power @ -45 dBc ACLR, 2140 MHz Noise Figure Operating Current Range, Icc (3) Device Voltage, Vcc Noise Figure Device Bias (3) 4. Typical parameters reflect performance in a tuned application circuit at +25° C. 1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 22mA of current when used with a series bias resistor of R1=15Ω. (ie. total device current typically will be 822 mA.) Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature RF Input Power (con.


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