HY64UD16322A

www.DataSheet4U.com HY64UD16322A Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History 1.0 1.1 Initial Change process code -B Draft Date Jan. 03. ’03 May. 13. ’03 Remark Preliminary This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. Revision 1.1 May. 2003 1 HY64UD16322A Series 2M x 16 bit Low Low Power 1T/1C SRAM DESCRIPTION The HY64UD16322A is a 32Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The HY64UD16322A adopts one transistor memory cell and is organized as 2,097,152 words by 16bits. The HY64UD16322A operates in the extended range of temperature and supports a wide operating voltage range. The HY64UD16322A also supports the deep power down mode for a super low standby current. The HY64UD16322A delivers the high-density low power SRAM capability to the high-speed low power system. FEATURES CMOS Process Technology 2M x 16 bit Organization TTL compatible and Tri-state outputs Deep Power Down : Memory cell data hold invalid Standard pin configuration : 48-FBGA(6mmX8mm) Data mask function by /LB, /UB Separated I/O Power Supply : Vddq PRODUCT FAMILY Product No. HY64UD16322A-DF70E HY64UD16322A-DF70I Voltage [V] 2.7~3.3 2.7~3.3 Mode 1CS with /UB,/LB:tCS1 1CS with /UB,/LB:tCS1 Power Dissipation (ISB1,Max) (IDPD...