ECP100G

www.DataSheet4U.com AH215 / ECP100G 1 Watt, High Gain HBT Amplifier Product Information Product Features 400 – 2300 MHz +31.5 dBm P1dB +46 dBm Output IP3 18 dB Gain @ 900 MHz Single Positive Supply (+5 V) Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg. Product Description The AH215 / ECP100 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +31.5 dBm of compressed 1-dB power. The part is housed in a lead-free/green/RoHScompliant SOIC-8 package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifier for various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, and UMTS, where high linearity and high power is required. The internal active bias allows the AH215 / ECP100 to maintain high linearity over temperature and operate directly off a +5 V supply. Functional Diagram 1 8 7 6 5 2 3 4 Applications Final stage amplifiers for Repeaters Mobile Infrastructure Defense / Homeland Security Function Vref Input Output Vbias GND N/C or GND Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5 Specifications (1) Parameters Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure IS-95 Channel Power @ -45 dBc ACPR, 1960MHz Typical Performance (4) Units Min MHz MHz dB dB dB dBm dBm d...