Silicon Diffused-Junction Type Zener Diode
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U5ZA53C
TOSHIBA Zener Diode Silicon Diffused-Junction Type
U5ZA53C
Best Suited for Overvoltage Pro...
Description
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U5ZA53C
TOSHIBA Zener Diode Silicon Diffused-Junction Type
U5ZA53C
Best Suited for Overvoltage Protection of Electronic System: Electronic System for Use in Automobiles Electronic System for Commercial Use Electronic System for Industrial Use For Communications, Controls, Measuring Instruments, etc.
· · · High surge power withstanding capabilities that absorb load dump surge. Excellent surge responsibility for steep surge absorption. Surface mount type is available for easy applications. Unit: mm
JEDEC JEITA
― ― 3-11J2A
Maximum Ratings (Ta = 25°C)
Characteristics Allowable power dissipation (Note) Symbol P IRSM Rating 5 45 Unit W A
TOSHIBA
Weight: 2.5 g (typ.)
Non-repetitive peak reverse surge current (see figure 1 for the exponents.) Peak one cycle surge forward current (single half sine-wave, t = 10 ms) Junction temperature Storage temperature
IRSM
IFSM Tj Tstg
700 -40 to 150 -40 to 150
A °C °C
IRSM 2
Note: Lead tip temperature
TL = 25°C
0
10 ms
Figure 1
1
2002-08-14
U5ZA53C
Electrical Characteristics (Ta = 25°C)
Zener Voltage VZ [V] (IZ = 10 mA) Min U5ZA53C 47.7 Typ. 53.0 Max 58.3 Operating Resistance rd [W] (IZ = 10 mA) Max 65 Temperature Coefficient aT [mV/°C] (IZ = 10 mA) Typ. 45 Max 70 Forward Voltage VF [V] (IF = 6 A) Max 1.2 Reverse Current IR [mA] (VR = 42.4 V) Max 10
Type No.
Marking
Type code Lot No. Code 53C Type U5ZA53C
53C
Weekly code Year (last two number of the christian era) Cathode Mark
Standard Soldering Pad
9....
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