HY62UF16403A

www.DataSheet4U.com HY62UF16403A Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No 09 History Marking Information add tBLZ / tOLZ value is changed Output Load is redefined Isb, Isb1, Vdr, Iccdr are redefined Changed Logo Changed Isb1 values Draft Date Dec.18.2000 Remark Final 10 11 Mar.23.2001 Jun.07.2001 Final Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.11 / Jun.01 Hynix Semiconductor HY62UF16403A Series DESCRIPTION The HY62UF16403A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62UF16403A uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. FEATURES Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup -. 1.2V(min) data retention Standard pin configuration -. 48-ball uBGA Product No. Voltage (V) Speed (ns) Operation Current/Icc(mA) 5 5 HY62UF16403A 2.7~3.3 55/70/85 HY62UF16403A-I 2.7~3.3 55/70/85 Note 1. Blank : Commercial, I : Industrial 2. Current value ...