HY62SF16804A

www.DataSheet4U.com HY62SF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No 04 History Initial Revision History Insert Revised - Reliability Spec Deleted Change AC Characteristics - tCLZ : 10/10/20 ---> 10/10/10 - tBLZ : 5/5/5 ---> 10/10/10 Part Number is changed - HY62QF16803A --> HY62QF16804A Marking Instruction is inserted Test Condition Changed - ILO / ISB / ISB1 / VDR / ICCDR Marking Istruction Inserted Change Logo - Hyundai à Hynix AC Parameter is changed - tCHZ : 30ns --> 20ns - tBHZ : 30ns --> 20ns - tOHZ : 30ns --> 20ns Change DC Parameter - Icc1(1us) : 5mA à 4mA Change Data Retention - IccDR(LL) : 25uA à 15uA Change AC Parameter - tOE : 40ns à 35ns@70ns Draft Date Jul.02.2000 Remark Preliminary 05 Oct.23.2000 Preliminary 06 Nov.13.2000 Preliminary 07 08 Dec.5.2000 Dec.16.2000 Preliminary Preliminary 09 Apr.28.2001 10 Jul.18.2001 11 Jan.28.2002 This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.11 /Jan. 2002 Hynix Semiconductor HY62SF16804A DESCRIPTION The HY62SF16804A is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. The HY62SF16804A uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is part...