HY62SF16404E

www.DataSheet4U.com HY62SF16404E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No 00 01 02 History Initial Draft Package Height Changed 1.0mm -> 0.9mm ISB1 Changed 6uA -> 10uA VOH Changed 1.6V -> 1.4V Icc Changed 0.5mA -> 1.0mA Draft Date Dec.20.2001 Mar.05.2002 May.17.2002 Remark Preliminary Preliminary Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.02 / May.02 Hynix Semiconductor HY62SF16404E Series DESCRIPTION The HY62SF16404E is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62SF16404E uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. FEATURES Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup -. 1.2V(min) data retention Standard pin configuration -. 48-ball FBGA Product No. Voltage (V) Speed (ns) 70 Operation Current/Icc(mA) 1.0 HY62SF16404E-I 1.65~2.3 Note 1. I : Industrial 2. Current value is max. Standby Current(uA) SL LL 6 10 Temperature (°C)...