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HY62SF16404C Dataheets PDF



Part Number HY62SF16404C
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description 256Kx16bit full CMOS SRAM
Datasheet HY62SF16404C DatasheetHY62SF16404C Datasheet (PDF)

www.DataSheet4U.com HY62SF16404C Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No 00 01 History Initial Draft Part No Change 100ns, 120ns Part Delete Marking Information add tBLZ / tOLZ value is changed Icc1 value is changed Output Load is redefined Isb, Isb1, Vdr, Iccdr are redefined Changed Logo Changed Isb1 values Draft Date Jul.06.2000 Oct.30.2000 Remark Preliminary Preliminary 02 Dec.20.2000 Final 03 .

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www.DataSheet4U.com HY62SF16404C Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No 00 01 History Initial Draft Part No Change 100ns, 120ns Part Delete Marking Information add tBLZ / tOLZ value is changed Icc1 value is changed Output Load is redefined Isb, Isb1, Vdr, Iccdr are redefined Changed Logo Changed Isb1 values Draft Date Jul.06.2000 Oct.30.2000 Remark Preliminary Preliminary 02 Dec.20.2000 Final 03 04 Mar.23.2001 Jun.07.2001 Final Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.04 / Jun.01 Hynix Semiconductor HY62SF16404C Series DESCRIPTION The HY62SF16404C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62SF16404C uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. FEATURES • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup -. 1.2V(min) data retention • Standard pin configuration -. 48-ball uBGA Product No. Voltage (V) Speed (ns) 85 Operation Current/Icc(mA) 3 HY62SF16404C-I 1.7~2.3 Note 1. I : Industrial 2. Current value is max. Standby Current(uA) LL SL 10 3 Temperature (°C) -40~85 PIN CONNECTION 1 2 /OE /UB 3 A0 A3 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 /CS IO2 IO4 IO5 IO6 6 NC IO1 IO3 Vcc Vss IO7 A17 ADD INPUT BUFFER PRE DECODER A0 BLOCK DIAGRAM ROW DECODER A B C D E F G H /LB IO9 I/O1 SENSE AMP COLUMN DECODER IO10 IO11 A5 Vss Vcc IO12 A17 IO13 NC I/O8 DATA I/O BUFFER MEMORY ARRAY 256K x 16 WRITE DRIVER I/O9 BLOCK DECODER IO15 IO14 A14 IO16 NC NC A8 A12 A9 I/O16 /WE IO8 A11 NC /CS /OE /LB /UB /WE uBGA PIN DESCRIPTION Pin Name /CS /WE /OE /LB /UB Pin Function Chip Select Write Enable Output Enable Lower Byte Control (I/O1~I/O8) Upper Byte Control (I/O9~I/O16) Pin Name I/O1~I/O16 A0~A17 Vcc Vss NC Pin Function Data Inputs/Outputs Address Inputs Power (1.7~2.3) Ground No Connection Rev.04 / Jun.01 2 HY62SF16404C Series ORDERING INFORMATION Part No. HY62SF16404C-DM85I HY62SF16404C-SM85I Speed 85 85 Power LL-part SL-part Temp. I I Package uBGA uBGA ABSOLUTE MAXIMUM RATINGS (1) Symbol VIN, VOUT Vcc TA TSTG PD TSOLDER Parameter Input/Output Voltage Power Supply Operating Temperature Storage Temperature Power Dissipation Ball Soldering Temperature & Time Rating -0.3 to 2.6 -0.3 to 3.6 -40 to 85 -55 to 150 1.0 260 • 10 Unit V V °C °C W °C•sec Remark HY62SF16404C-I Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating o.


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