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HY29DS323

Hynix Semiconductor
Part Number HY29DS323
Manufacturer Hynix Semiconductor
Description (HY29DS322 / HY29DS323) Simultaneous Read/Write Flash Memory
Published Dec 12, 2006
Detailed Description com HY29DS322/HY29DS323 32 Megabit (4M x 8/2M x16) Super-Low Voltage, Dual Bank, Simultaneous Read/Writ...
Datasheet PDF File HY29DS323 PDF File

HY29DS323
HY29DS323

Overview
com HY29DS322/HY29DS323 32 Megabit (4M x 8/2M x16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.
8 to 2.
2 V (2.
0V ± 10%) − Ideal for battery-powered applications Simultaneous Read/Write Operations − Host system can program or erase in one bank while simultaneously reading from any sector in the other bank with zero latency between read and write operations High Performance − 100, 110 and 120 ns access time versions Ultra Low Power Consumption (Typical Values) − Automatic sleep mode current: 5 µA − Standby mode current: 5 µA − Read curre...


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