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PMD5002K
MOSFET driver
Rev. 01 — 6 November 2006 Product data sheet
1. Product profile
1.1 General description
PNP switching transistor and high-speed switching diode to protect the base-emitter junction in reverse direction in a SOT346 (SC-59A/TO-236) small Surface-Mounted Device (SMD) plastic package.
1.2 Features
I I I I I I Switching transistor and high-speed switching diode as driver High-speed switching diode to protect the base-emitter junction Application-optimized pinout Internal connections to minimize layout effort Space-saving solution Reduces component count
1.3 Applications
I Power MOSFET driver
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM Diode IF VF
[1]
Quick reference data Parameter collector-emitter voltage collector current peak collector current single pulse; tp ≤ 1 ms Conditions open base Min Typ Max −40 −0.6 −1 Unit V A A
PNP transistor
forward current forward voltage
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
IF = 200 mA
[1]
-
0.2 1.1
A V
-
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PMD5002K
MOSFET driver
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description base TR1, anode D1 emitter TR1, cathode D1 collector TR1
1 2
D1
Simplified outline
3
Symbol
3
TR1
1
2
006aaa656
3. Ordering information
Table 3. Ordering information Package Name PMD5002K SC-59A Description plastic surface-mounted package; 3 leads Version SOT346 Type number
4. Marking
Table 4. Marking codes Marking code D5 Type number PMD5002K
PMD5002K_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 6 November 2006
2 of 15
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NXP Semiconductors
PMD5002K
MOSFET driver
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO IC ICM IB IBM Ptot Parameter collector-base voltage collector-emitter voltage collector current peak collector current base current peak base current total power dissipation single pulse; tp ≤ 1 ms Tamb ≤ 25 °C
[1] [2] [3]
Conditions open emitter open base single pulse; tp ≤ 1 ms
Min -
Max −40 −40 −0.6 −1 −0.2 −0.3 250 330 445 0.2 0.6
Unit V V A A A A mW mW mW A A
PNP transistor
Diode IF IFRM IFSM forward current repetitive peak forward current non-repetitive peak forward current tp ≤ 1 ms; δ = 0.25 square wave tp ≤ 1 µs tp ≤ 100 µs tp ≤ 10 ms Device Tj Tamb Tstg
[1] [2] [3]
-
−65 −65
9 3 1.7 150 +150 +150
A A A °C °C °C
junction temperature ambient temperature storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
PMD5002K_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 6 November 2006
3 of 15
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NXP Semiconductors
PMD5002K
MOSFET driver
500 Ptot (mW) 400
(2) (1)
006aaa870
300
(3)
200
100
0 −75
−25.