FDS4935BZ

www.DataSheet4U.com FDS4935BZ September 2006 tm FDS4935BZ Dual 30 Volt P-Channel PowerTrench“ MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features x –6.9 A, –30 V. RDS(ON) = 22 m: @ VGS = –10 V RDS(ON) = 35 m: @ VGS = – 4.5 V x Extended VGSS range (–25V) for battery applications x ESD protection diode (note 3) x High performance trench technology for extremely low RDS(ON) x High power and current handling capability D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G2 S2 S G1 S1 G S 8 1 S Absolute Maximum Ratings Symbol VDS\ VGS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –30 +25 (Note 1a) Units V V A W –6.9 –50 1.6 1.0 0.9 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range qC Thermal Characteristics RTJA RTJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 qC/W qC/W Package...