BSR58LT1
JFET Chopper Transistor
N−Channel − Depletion
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Ratin...
BSR58LT1
JFET Chopper
Transistor
N−Channel − Depletion
Features
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain −Gate Voltage
Gate −Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C Derate above 25°C
VDG
−40
Vdc
VGS
−35
Vdc
IG
50
mAdc
PD
350
mW
2.8
mW/°
C
Lead Temperature
Operating and Storage Junction Temperature Range
TL
300
°C
TJ, Tstg − 65 to +150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage (IG = −1.0 mAdc)
V(BR)GSS
Gate Reverse Current (VGS = −15 Vdc)
IGSS
Gate Source Cutoff Voltage (VDS = 5.0 Vdc, ID = 1.0 mAdc)
VGS(off)
Drain−Cutoff Current (VDS = 5.0 Vdc, VGS = −10 Vdc)
ID(off)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (Note 1) (VDS = 15 Vdc)
IDSS
Static Drain−Source On Resistance (VDS = 0.1 Vdc)
rDS(on)
Drain Gate and Source Gate On−Capacitance (VDS = VGS = 0, f = 1.0 MHz)
Cdg(on) +
Csg(on)
Drain Gate Off−Capacitance (VGS = −10 Vdc, f = 1.0 MHz)
Cdg(off)
Source Gate Off−Capacitance (VGS = −10 Vdc, f = 1.0 MHz)
Csg(off)
1. Pulse...