MRF7S21170HR3

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications.  Typical Single--Carrier W--CDMA 1C4h0a0nnmeAl ,BPanoudtw=id5t0h Watts Avg., f = 3.84 MHz, =Pe2r1fo6r7m.5anMcHe:z,VIDQDM=a2g8nVituodltes,CIDliQpp=ing, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 31% Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth  Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW Output Power  Pout @ 1 dB Compression Point ≃ 170 Watts CW Features  100% PAR Tested for Guaranteed Output Power Capability  Characterized with Series Equivalent Large--Signal Impedance Parameters  Internally Matched for Ease of Use  Integrated ESD Protection  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Optimized for Doherty Applications  In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. Document Number: MRF7S21170H Rev. 7, 2/2012 MRF7S21170HR3 MRF7S21170HSR3 2110--2170 MHz, 50 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465B--04 NI--880 MRF7S21170HR3 CASE 465C--03 NI--880S MRF7S21170HSR3 Table 1. Maximu...