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HVD359

Hitachi Semiconductor
Part Number HVD359
Manufacturer Hitachi Semiconductor
Description Variable Capacitance Diode
Published Dec 7, 2006
Detailed Description com HVD359 Variable Capacitance Diode for VCXO ADE-208-955 (Z) Rev. 0 Jul. 2000 Features • High capaci...
Datasheet PDF File HVD359 PDF File

HVD359
HVD359

Overview
com HVD359 Variable Capacitance Diode for VCXO ADE-208-955 (Z) Rev.
0 Jul.
2000 Features • High capacitance ratio and good C-V linearity.
• To be usable at low voltage.
• Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information Type No.
HVD359 Laser Mark G Package Code SFP Outline Cathode mark Mark 1 G 2 1.
Cathode 2.
Anode HVD359 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 −55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol IR1 IR2 Capacitance C1 C4 Capacitance ratio Series resistance ESD-Capability * 1 Min  ...


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