HEXFET Power MOSFET
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequ...
Description
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits
l l
HEXFET® Power MOSFET
IRLR3715ZPbF IRLU3715ZPbF
11m:
PD - 95088A
VDSS RDS(on) max
20V
Qg
7.2nC
Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current
D-Pak IRLR3715Z
I-Pak IRLU3715Z
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
20 ± 20 49 35
Units
V A
f f
200 40 20 0.27 -55 to + 175 300 (1.6mm from case) W/°C °C W
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient
Typ.
Max.
3.75 50 110
Units
°C/W
gÃ
––– ––– –––
Notes through
are on page 11
www.irf.com
1
12/7/04
IRLR/U3715ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ...
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