PBSS2515F

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F 15 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Jan 26 2001 Sep 21 Philips Semiconductors Product specification 15 V low VCEsat NPN transistor FEATURES Low collector-emitter saturation voltage High current capabilities Improved thermal behaviour due to flat leads. APPLICATIONS General purpose switching and muting Low frequency driver circuits LCD backlighting Audio frequency general purpose amplifier applications Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION NPN low VCEsat transistor in a SC-89 (SOT490) plastic package. PNP complement: PBSS3515F. MARKING TYPE NUMBER PBSS2515F 2A MARKING CODE Fig.1 handbook, halfpage PBSS2515F QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 15 500 1 <500 UNIT V mA A mΩ 3 3 1 2 MAM410 1 Top view 2 Simplified outline (SC-89; SOT490) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb...