NTP6N50

www.DataSheet4U.com NTP6N50 Preferred Devices Product Preview Power MOSFET 6 Amps, 500 Volts N–Channel TO–220 Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features http://onsemi.com Higher Current Rating Lower RDS(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Switch Mode Power Supplies PWM Motor Controls Converters Bridge Circuits 6 AMPERES 500 VOLTS RDS(on) = 1700 mΩ N–Channel D Typical Applications G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage – Continuous – Non–Repetitive (tpv10 ms) Drain – Continuous @ TA 25°C – Continuous @ TA 100°C – Single Pulse (tpv10 µs) Total Power Dissipation @ TA 25°C Derate above 25°C Total Power Dissipation @ TA 25°C (Note 1.) Operating and Storage Temperature Range Single Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 100 V, VGS = 10 Vdc, IL(pk) = 6 A, L = 10 mH, VDS = 500 Vdc, RG = 25 Ω) Thermal Resistance – Junction–to–Case – Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGS ID ID IDM PD Value 500 500 "20 "40 6.0 5.0 18 104 0.83 1.75 –55 to +150 180 Adc Apk Watts W/°C Watts °C mJ 1 Unit Vdc Vdc Vdc 4 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain TO–220AB CASE 221A STYLE 5 NTP6N50 LLYWW 1 Gate 3 Source...