MRFG35005MT1

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 2, 5/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 450 mWatt Power Gain — 11 dB Efficiency — 25% 4.5 Watts P1dB @ 3.55 GHz Excellent Phase Linearity and Group Delay Characteristics High Gain, High Efficiency and High Linearity N Suffix Indicates Lead - Free Terminations In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35005NT1 MRFG35005MT1 3.5 GHz, 4.5 W, 12 V POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Operating Case Temperature Range Symbol VDSS PD VGS Pin Tstg Tch TC Value 15 10.5 0.07 (2) -5 30 - 65 to +150 175 - 20 to +85 (2) Unit Vdc W W/°C Vdc dBm °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Class AB Symbol RθJC Value 14.2 (2) Unit °C/W Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD -...