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MHVIC2114R2 Dataheets PDF



Part Number MHVIC2114R2
Manufacturers Motorola
Logo Motorola
Description RF LDMOS Wideband Integrated Power Amplifier
Datasheet MHVIC2114R2 DatasheetMHVIC2114R2 Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MHVIC2114R2/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip matching design makes it usable from 1600 to 2600 MHz. The linearity perfor.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MHVIC2114R2/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover all modulation formats for cellular applications: CDMA and W - CDMA. The device is in a PFP - 16 flat pack package that provides excellent thermal performance through a solderable backside contact. Final Application • Typical Two - Tone Performance: VDD = 27 Volts, IDQ1 = 95 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 15 Watts PEP, Full Frequency Band Power Gain — 32 dB IMD — - 30 dBc Driver Application • Typical Single - Channel W - CDMA Performance: VDD = 27 Volts, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110 - 2170 MHz, 3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz Offset, 64 DTCH, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 32 dB ACPR — - 58 dBc • P1dB = 14 Watts, Gain Flatness = 0.2 dB from 2110 to 2170 MHz • Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Temperature Compensation with Enable/Disable Function • Integrated ESD Protection • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. MHVIC2114R2 2100 MHz, 27 V, 23 dBm SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER Freescale Semiconductor, Inc... CASE 978 - 03 PFP - 16 PIN CONNECTIONS VGS3 VGS2 VGS1 Quiescent Current Temperature Compensation N.C. VGS3 VGS2 VDS3/RFout VGS1 RFin RFin VDS1 VDS2 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 N.C. VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout N.C. RFin IC VDS1 VDS2 3 Stages IC (Top View) NOTE: Exposed backside flag is source terminal for transistors. Rev. 1 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MHVIC2114R2 1 Freescale Semiconductor, Inc. MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Characteristic Thermal Resistance, Junction to Case Driver Application (Pout = +0.2 W CW) Stage 1, 27 Vdc, IDQ1 = 96 mA Stage 2, 27 Vdc, IDQ2 = 204 mA Stage 3, 27 Vdc, IDQ3 = 111 mA Symbol RθJC 11.5 7.52 5.52 Value 65 - 0.5, +15 - 65 to +150 150 5 Unit Vdc Vdc °C °C dBm THERMAL CHARACTERISTICS Value (1) Unit °C/W Freescale Semiconductor, Inc... ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M1 (Minimum) C2 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22 - A113 Rating 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit W - CDMA CHARACTERISTICS (In Motorola Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110 - 2170 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gain Flatness Input Return Loss Adjacent Channel Power Ratio Group Delay Phase Linearity Gps GF IRL ACPR Delay — 29 — — — — — 32 0.3 - 13 - 60 1.7 0.2 36 0.5 - 10 - 57 — — dB dB dB dBc ns ° (1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. MHVIC2114R2 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. 1 VGS3 R3 VGS2 R2 VGS1 R1 RF INPUT 16 VDS3 + C1 C2 2 15 C17 C18 + C19 + C20 + C5 C3 3 14 Z4 4 13 C15 RF OUTPUT + C14 C4 5 12 Z2 C9 6 11 C16 Z5 Z3 Z1 C22 VDS1 + + C8 C7 C6 7 Quiescent Current Temperature Compensation 10 Freescale Semiconductor, Inc... C21 VDS2 + C13 + C12 C11 C10 8 9 Z1 Z2 Z3 Z4 Z5 PCB 0.323″ x .055″ 50 Ω Microstrip 0.196″ x .176″ Microstrip 0.286″ x .055″ Microstrip 0.150″ x .018″ Microstrip 0.363″ x .055″ Microstrip Arlon, 0.021″, εr = 2.55 Figure 1. MHVIC2114R2 Test Circuit Schematic Table 1. MHVIC2114R2 Test Circuit Component Designations and Values Part C1, C5, C8, C12, C14, C19 C2, C3, C4, C7, C11, C18 C6, C10, C17 C9 C15, C16 C22 C13, C20, C21 R1, R2, R3 Description 1 µF Tantalum Chip Capacitors 0.01 µF Chip Capacitors 6.8 pF Chip Capacitors (ACCU - P) 1.5 pF Chip Capacitor (ACCU - P) 2.2 pF Chip Capacitors (ACCU - P) 1.0 pF Chip Capacitor (ACCU - P) 330 µF Electrolytic Capacitors 1 kW Chip.


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