FDMC2523P

www.DataSheet4U.com FDMC2523P P-Channel QFET® September 2006 FDMC2523P P-Channel QFET®  -150V, -3A, 1.5: Features „ Low Crss ( typical 10pF) „ Fast Switching „ Low gate charge ( typical 6.2 nC ) „ Improved dv / dt capability „ RoHS compliant tm General Description These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Application „ Active Clamp Switch Bottom 6 7 8 D D D D Top 5 6 2 1 S S S G 5 4 3 2 1 7 8 4 3 MLP 3.3x3.3 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG TL dv/dt Power Dissipation Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (Tc=25°C) - Continuous (Tc=100°C) - Pulsed (Steady State) Operating and Storage Temperature Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Peak Diode Recovery dv/dt (Note 2) Ratings -150 ±30 -3 -1.8 -12 25 -55 to +150 300 -5 W °C °C V/ns A Units V V Thermal Characteristics RTJC RTJA RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junc...