AT49BV6416C

www.DataSheet4U.com Features 64-megabit (4M x 16) Flash Memory 2.7V - 3.6V Read/Write High Performance – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout – One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 200 ms Four Plane Organization, Permitting Concurrent Read in Any of the Three Planes not Being Programmed/Erased – Memory Plane A: 16M Memory Including Eight 4K Word Sectors – Memory Plane B: 16M Memory Consisting of 32K Word Sectors – Memory Plane C: 16M Memory Consisting of 32K Word Sectors – Memory Plane D: 16M Memory Consisting of 32K Word Sectors Suspend/Resume Feature for Erase and Program – Supports Reading and Programming Data from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation – 30 mA Active – 35 µA Standby 2.2V I/O Option Reduces Overall System Power VPP Pin for Write Protection and Accelerated Program/Erase Operations Reset Input for Device Initialization CBGA Package Top or Bottom Boot Block Configuration Available 128-bit Protection Register Common Flash Interface (CFI) 64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory AT49BV6416C AT49BV6416CT 1. Description The AT49BV6416C(T) is a 2.7-volt 64-megabit Flash memory. The memory is divid...