AT49BV161T

www.DataSheet4U.com Features Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) Access Time – 70 ns Sector Erase Architecture – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time – 20 µs Fast Sector Erase Time – 300 ms Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Byte/Word by Suspending Programming of Any Other Byte/Word Low-power Operation – 30 mA Active – 10 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection VPP Pin for Write Protection and Accelerated Program/Erase Operations RESET Input for Device Initialization Sector Lockdown Support TSOP and CBGA Package Options Top or Bottom Boot Block Configuration Available 128-bit Protection Register 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory AT49BV160 AT49LV160 AT49BV160T AT49BV161 AT49LV161 AT49BV161T AT49LV161T Description The AT49BV/LV16X(T) is a 3.0-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP, 45-ball and 48-ball CBGA packages. The device has CE and OE control signals to avoid any bu...