AT28HC256N

www.DataSheet4U.com Features Fast Read Access Time – 90 ns Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms Maximum – 1 to 64-byte Page Write Operation Low Power Dissipation: 300 µA Standby Current (CMOS) Hardware and Software Data Protection DATA Polling for End of Write Detection High Reliability CMOS Technology – Endurance: 105 Cycles – Data Retention: 10 Years Single 5V ±10% Supply CMOS and TTL Compatible Inputs and Outputs JEDEC Approved Byte-wide Pinout 256 (32K x 8) High-speed Parallel EEPROM AT28HC256N Description The AT28HC256N is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256N offers access times to 90 ns with power dissipation of just 440 mW. When the AT28HC256N is deselected, the standby current is less than 3 mA. The AT28HC256N is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. During a write cycle, the address and 1 to 64 bytes of data are internally latched, freeing the addresses and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal c...