5HP02N

Ordering number:ENN6530 P-Channel Silicon MOSFET 5HP02N Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2178 [5HP02N] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1.3 1.3 1 : Source 2 : Drain 3 : Gate SANYO : NP Ratings –50 ±20 –0.14 –0.56 0.4 150 –55 to +150 Unit V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=–1mA, VGS=0 VDS=–50V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–100µA VDS=–10V, ID=–70mA ID=–70mA, VGS=–10V ID=–40mA, VGS=–4V –1 0.12 0.16 4.7 6.5 6.1 9.1 Conditions Ratings min –50 –10 ±10 –2.5 typ max Unit V µA µA V S Ω Ω Marking : XF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure ...